Suspended Graphene Devices for Quantum Electronics and Nanosensing
Pablo Jarillo-Herrero, Assistant Professor, Department of Physics
The research objective of this seed project is to investigate electronic transport in ultra-high mobility suspended graphene devices (GDs) both to study fundamental quantum electronics and to assess their potential as chemical and mass nanosensors.
A crucial element of this research is the fabrication of high-quality suspended GDs. Multiterminal devices (see Figure below) will be used to study fundamental quantum phenomena, such as the fractional quantum Hall effect or the spin Hall effect, while high quality suspended GNRs will be actuated as tunable high-frequency nanoresonators. In addition, the possibility of passivating the edges of GNRs with desired chemical groups will enable ultra-sensitive chemical and mass detection.
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Figure: (a) AFM picture of a graphene bipolar superconducting transistor. (b) AFM (phase) picture of crystallographic cuts on single layer graphene. Notice that all cuts (bright lines) form 60° or 120° angles, indicating the preservation of chirality. (c) Resistivity vs gate voltage for a suspended graphene FET with a room temperature mobility of 30,000 cm2/V?s. (d) SEM image of nanostructured graphene (bars, ribbons and constrictions) with contact electrodes and top gate electrodes for lateral heterodensity junctions.
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